IRFP150 MOSFET ( 100V, 41A)

Overview

The IRFP150 is a robust N-Channel Power MOSFET engineered to handle demanding high-current applications with ease. With a drain-to-source voltage (VDS) of 100V and a continuous drain current (ID) of 41A at 25°C, this transistor delivers exceptional switching performance and low on-resistance. Its TO-247 package ensures excellent thermal dissipation, making it a reliable choice for power supplies, motor drivers, and industrial control systems.

Key Features

• High Current Capability: Continuous drain current of 41A, ideal for high-power circuits.
• Low On-Resistance: Minimizes conduction losses, improving overall efficiency.
• Fast Switching Speed: Optimized for high-frequency applications.
• 100V Drain-Source Voltage: Suitable for a wide range of power supply and motor control designs.
• TO-247 Package: Excellent thermal performance and easy mounting.

Technical Specifications

• Drain-Source Voltage (VDS): 100V
• Continuous Drain Current (ID): 41A @ 25°C
• On-Resistance (RDS(on)): 0.055 Ω (typical)
• Power Dissipation (PD): 200W
• Gate-Source Voltage (VGS): ±20V
• Package: TO-247
• Technology: N-Channel Enhancement Mode

Applications & Use Cases

• Switching Power Supplies: Efficiently regulate and convert power.
• DC Motor Control: Drive motors in robotics and automation.
• Battery Management Systems: Protect and manage battery charging/discharging.
• Inverters & Converters: Handle high-current switching in renewable energy systems.
• Audio Amplifiers: Provide high-current output stages.

What's Included

• 1 x IRFP150 MOSFET (TO-247 package)

Compatibility

• This MOSFET is a standard TO-247 component and is compatible with a wide range of microcontrollers, motor drivers, and power supply circuits. It can be driven by logic-level gate drivers or dedicated MOSFET driver ICs.

MOKWN Recommendation

For Egyptian makers, students, and engineers, the IRFP150 is a versatile and reliable choice for high-current projects. Its balance of voltage and current ratings makes it suitable for power electronics experiments, robotics, and industrial prototypes. We recommend using proper heat sinking and gate drivers to fully utilize its capabilities.