Overview
The IRF250 is a robust N-channel power MOSFET housed in the industry-standard TO-3 metal package. Rated for 200V drain-source voltage and 30A continuous drain current, this transistor is designed for high-power switching and amplification applications where reliability and thermal performance are critical. Whether you're building a motor controller, a high-power inverter, or an audio amplifier, the IRF250 delivers the ruggedness and efficiency you need.
Key Features
- High Voltage Rating: 200V drain-source voltage (V_DS) handles demanding power rails.
- High Current Capacity: 30A continuous drain current (I_D) supports heavy loads.
- Low On-Resistance: Optimized R_DS(on) minimizes conduction losses.
- TO-3 Metal Package: Excellent thermal conductivity and mechanical durability.
- Fast Switching: Designed for efficient high-frequency operation.
- N-Channel Enhancement Mode: Simple drive requirements.
Technical Specifications
- Drain-Source Voltage (V_DS): 200V
- Continuous Drain Current (I_D): 30A
- On-Resistance (R_DS(on)): 0.085Ω (typical)
- Power Dissipation (P_D): 150W
- Gate-Source Voltage (V_GS): ±20V
- Operating Temperature: -55°C to +150°C
- Package: TO-3 (metal can)
Applications & Use Cases
- Motor Control: Suitable for DC motor drivers and robotic actuators.
- Power Inverters: Ideal for converting DC to AC in UPS and solar systems.
- Switching Power Supplies: High-efficiency power conversion.
- Audio Amplifiers: High-power audio output stages.
- Battery Management: Load switching and protection circuits.
- Industrial Automation: Solenoid and relay drivers.
What's Included
- 1x IRF250 MOSFET (TO-3 package)
Compatibility
- Compatible with standard TO-3 heatsinks and mounting hardware.
- Can be used as a replacement for other TO-3 MOSFETs with similar ratings.
- Works with common gate drivers and microcontroller outputs (with proper level shifting).
MOKWN Recommendation
For Egyptian electronics enthusiasts and professionals, the IRF250 is a solid choice for high-power projects. Its TO-3 package ensures efficient heat dissipation, making it reliable for continuous heavy loads. We recommend pairing it with a suitable heatsink and gate driver for optimal performance. Whether you're a student working on a final year project or an engineer developing industrial equipment, the IRF250 offers dependable power handling at a competitive price.
Related Components
IRF1010 MOSFET (55V, 85A)
25 EGP
IRF1405 N-Channel Power MOSFET 55V 150A – TO-220 Through-Hole Transistor
45 EGP
IRF150 MOSFET (100V, 40A)
30 EGP
IRF3205 MOSFET, 55 V
25 EGP
IRF3315 MOSFET (150V, 27A)
50 EGP
IRF3415 MOSFET (150V, 43A)
40 EGP